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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * * Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.0 1 Unit Vdc Vdc Vdc A Thermal Data P D Total Device Dissipation @ TA = 25C Derate above 25C 5.0 28.5 Watts mW/ C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) Value Min. 36 18 4.0 Typ. 5.0 .25 Max. Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) 5.0 - DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 12.5Vdc, f = 1.0 MHz Value 15 20 pF FUNCTIONAL Symbol GPE C Power Gain Test Conditions Test Circuit-Figure 1 Pout = 3.0 W, VCC = 12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 3.0 W, VCC = 12.5Vdc f = 175 MHz Value Min. 7.8 Typ. Max. Unit dB Collector Efficiency 50 - - % Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 12.5 Vdc C6 C5 RFC2 L2 C4 POUT (RL=50 OHMS) C1 PIN (RS=50 OHMS) RFC1 C2 Bead C3 L1 Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS. C1,3: 2.0-50 pF ARCO 461 ELEMENCO C5: 1000 pF FEED THRU L1: 1 TURN #18 AWG 1/4" I.D. RFC2: 0.15 uH MOLDED CHOKE C2,4: 5.0-80 pF ARCO 462 ELEMENCO C6: 5.0 uF L2: 2 1/2 TURNS #18 AWG 1/4" I.D BEAD: FERROXCUBE 56-570-65/3B RFC1: 0.15 uH MOLDED CHOKE WITH BEAD ON GROUND LEG Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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